Homework 02

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CBE 179 - Homework #02

Due Friday, 2014.09.19


  1. How is the observed current flow in a semiconductor related to the electron and hole currents?

  2. Determine electron and hole mobility, conductivity, and resistivity in intrinsic silicon and germanium.

  3. Determine current density in intrinsic silicon and germanium when an electric field of 5V/cm is applied. Comment on the difference between these materials.

  4. Determine electron and hole mobility, conductivity, and resistivity in silicon and germanium that have been doped with boron at a concentration of 10^15 atoms per cm^3. Comment on the difference between these materials.

  5. Determine current density in the doped silicon and germanium when an electric field of 5V/cm is applied. Comment on the difference between these materials.

  6. Look at these datasheets for this set of complementary N-channel and P-channel MOSFETs. How does the performance of these devices compare, and how can this be explained by the physics of the device? If the devices were manufactured from germanium instead of silicon, all else being equal, how would you expect this performance disparity to change?

  7. Read Moore's 1965 paper. What did he actually hypothesize, and how is this hypothesis qualified?

  8. Read Lundstrom's paper, "Moore's Law Forever?". What factors did Lundstrom predict would be the limiting factors in semiconductor manufacturing? Find and discuss an example of a modern semiconductor engineering technique that has sought to address these challenges.

  9. Write the schematics for CMOS circuits that implements the NOT and OR logic functions. How do they operate?

  10. Create an account on the course wiki and verify that you can edit this Test Page.